Aligned SiC Porous Nanowire Arrays with Excellent Field Emission Properties Converted from Si Nanowires on Silicon Wafer-Reference-Cited by-同舟云学术

Aligned SiC Porous Nanowire Arrays with Excellent Field Emission Properties Converted from Si Nanowires on Silicon Wafer

Published:2008-12-02 Issue:51 Volume:112 Page:20126-20130
ISSN:1932-7447
Container-title:The Journal of Physical Chemistry C
language:en
Short-container-title:J. Phys. Chem. C

Author:

Yang Yajun¹,Meng Guowen¹,Liu Xianyun¹,Zhang Lide¹,Hu Zheng¹,He Chengyu¹,Hu Yemin¹

Affiliation:

1. Key Laboratory of Materials Physics, Anhui Key Laboratory of Nanomaterials and Nanostructures, Institute of Solid State Physics, Laboratory of Environmental Spectroscopy, Anhui Institute of Optics and Fine Mechanics, Chinese Academy of Sciences, Hefei 230031, China, and Key Laboratory of Mesoscopic Chemistry, Jiangsu Provincial Laboratory for Nanotechnology, Department of Chemistry, Nanjing University, Nanjing 210093, China

Publisher

American Chemical Society (ACS)

Subject

Surfaces, Coatings and Films,Physical and Theoretical Chemistry,General Energy,Electronic, Optical and Magnetic Materials

Link

https://pubs.acs.org/doi/pdf/10.1021/jp809359v

Reference51 articles.

1. Controllable Modification of SiC Nanowires Encapsulated in BN Nanotubes

2. Formation of Silicon Carbide Nanotubes and Nanowires via Reaction of Silicon (from Disproportionation of Silicon Monoxide) with Carbon Nanotubes

3. Growth of SiC nanowires/nanorods using a Fe–Si solution method

4. Direct synthesis of β-SiC and h-BN coated β-SiC nanowires

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