Hemin-Functionalized InAs-Based High Sensitivity Room Temperature NO Gas Sensors-Reference-Cited by-同舟云学术

Hemin-Functionalized InAs-Based High Sensitivity Room Temperature NO Gas Sensors

Published:2011-12-29 Issue:1 Volume:116 Page:826-833
ISSN:1932-7447
Container-title:The Journal of Physical Chemistry C
language:en
Short-container-title:J. Phys. Chem. C

Author:

Dedigama Aruna¹,Angelo Michael²,Torrione Pete¹,Kim Tong-Ho¹,Wolter Scott¹,Lampert William¹,Atewologun Ayomide¹,Edirisoorya Madhavie¹,Collins Leslie¹,Kuech Thomas F.³,Losurdo Maria¹⁴,Bruno Giovanni⁴,Brown April¹

Affiliation:

1. Department of Electrical and Computer Engineering, Pratt School of Engineering, Duke University, Durham, North Carolina 27707, United States

2. Department of Lab Medicine, University of California, San Francisco, California 94102, United States

3. Department of Chemical and Biological Engineering, College of Engineering, University of Wisconsin—Madison, Madison, Wisconsin 53706, United States

4. Institute of Inorganic Methodologies and of Plasmas-CNR, via Orabona 4, 70126 Bari Italy

Publisher

American Chemical Society (ACS)

Subject

Surfaces, Coatings and Films,Physical and Theoretical Chemistry,General Energy,Electronic, Optical and Magnetic Materials

Link

https://pubs.acs.org/doi/pdf/10.1021/jp2086889

Reference46 articles.

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3. Organometallic Chemistry on Silicon and Germanium Surfaces

4. Monolayer-derivative functionalization of non-oxidized silicon surfaces

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