Low-Voltage Organic Electronics Based on a Gate-Tunable Injection Barrier in Vertical graphene-organic Semiconductor Heterostructures
Author:
Affiliation:
1. LPICM, Ecole Polytechnique, CNRS, 91128 Palaiseau, France
2. Center for functional Nanomaterials, Brookhaven National Laboratory, Upton, New York 1197, United States
Funder
Basic Energy Sciences
?cole Polytechnique
Publisher
American Chemical Society (ACS)
Subject
Mechanical Engineering,Condensed Matter Physics,General Materials Science,General Chemistry,Bioengineering
Link
https://pubs.acs.org/doi/pdf/10.1021/nl5029599
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1. Graphene Barristor, a Triode Device with a Gate-Controlled Schottky Barrier
2. Graphene and Thin-Film Semiconductor Heterojunction Transistors Integrated on Wafer Scale for Low-Power Electronics
3. Highly Flexible Electronics from Scalable Vertical Thin Film Transistors
4. Field-Effect Tunneling Transistor Based on Vertical Graphene Heterostructures
5. Vertical field-effect transistor based on graphene–WS2 heterostructures for flexible and transparent electronics
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