Photothermally Activated Nanocrystalline Oxynitride with Superior Performance in Flexible Field-Effect Transistors-Reference-Cited by-同舟云学术

Photothermally Activated Nanocrystalline Oxynitride with Superior Performance in Flexible Field-Effect Transistors

Author:

Ok Kyung-Chul¹,Lim Jun-Hyung²,Jeong Hyun-Jun¹,Lee Hyun-Mo¹,Rim You Seung³^ORCID,Park Jin-Seong¹^ORCID

Affiliation:

1. Division of Materials Science and Engineering, Hanyang University, 222, Wangsimni-ro, Seongdong-gu, Seoul 04763, Republic of Korea

2. Display Research and Development Center, Samsung Display Company, Ltd., Yongin 17096, Republic of Korea

3. School of Intelligent Mechatronics Engineering, Sejong University, 209 Neungdong-ro, Gwangjin-gu, Seoul 05006, Republic of Korea

Funder

Ministry of Trade, Industry and Energy

Ministry of Science, ICT and Future Planning

Korea Display Research Corporation

Publisher

American Chemical Society (ACS)

Subject

General Materials Science

Link

Reference30 articles.

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