Vital Role of Oxygen for the Formation of Highly Rectifying Schottky Barrier Diodes on Amorphous Zinc–Tin–Oxide with Various Cation Compositions
Author:
Affiliation:
1. Felix-Bloch-Institut für Festkörperphysik, Universität Leipzig, Linnéstraße 5, 04103 Leipzig, Germany
Funder
Deutsche Forschungsgemeinschaft
Horizon 2020 Framework Programme
Publisher
American Chemical Society (ACS)
Subject
General Materials Science
Link
http://pubs.acs.org/doi/pdf/10.1021/acsami.7b06836
Reference41 articles.
1. Towards See-Through Displays: Fully Transparent Thin-Film Transistors Driving Transparent Organic Light-Emitting Diodes
2. Flexible full color organic light-emitting diode display on polyimide plastic substrate driven by amorphous indium gallium zinc oxide thin-film transistors
3. Auger electron and x‐ray photoelectron spectroscopy analysis of the hydrogenated amorphous silicon‐tin oxide interface: Evidence of a plasma‐induced reaction
4. Highly Conducting and Transparent SnO2Thin Films Prepared by RF Magnetron Sputtering on Low-Temperature Substrates
5. The stability of zinc oxide transparent electrodes fabricated by R.F. magnetron sputtering
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