Polarization-Dependent Photoinduced Bias-Stress Effect in Single-Crystal Organic Field-Effect Transistors-Reference-Cited by-同舟云学术

Polarization-Dependent Photoinduced Bias-Stress Effect in Single-Crystal Organic Field-Effect Transistors

Published:2017-09-21 Issue:39 Volume:9 Page:34153-34161
ISSN:1944-8244
Container-title:ACS Applied Materials & Interfaces
language:en
Short-container-title:ACS Appl. Mater. Interfaces

Author:

Choi Hyun Ho¹,Najafov Hikmet,Kharlamov Nikolai²,Kuznetsov Denis V.²,Didenko Sergei I.²,Cho Kilwon¹^ORCID,Briseno Alejandro L.³^ORCID,Podzorov Vitaly²^ORCID

Affiliation:

1. Department of Chemical Engineering, Pohang University of Science and Technology (POSTECH), Pohang 37673, South Korea

2. National University of Science and Technology MISiS, Moscow 119049, Russia

3. Department of Polymer Science & Engineering, University of Massachusetts, Amherst, Massachusetts 01002, United States

Funder

Ministry of Education and Science of the Russian Federation

Division of Materials Research

Publisher

American Chemical Society (ACS)

Subject

General Materials Science

Link

https://pubs.acs.org/doi/pdf/10.1021/acsami.7b11134

Reference49 articles.

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3. Akasaka, T.; Osuka, A.; Fukuzumi, S.; Kandori, H.; Aso, Y.Chemical Science of π-Electron Systems;Springer, 2015; Chapter 35 by J. Takeya, pp589−604.

4. High-Resolution ac Measurements of the Hall Effect in Organic Field-Effect Transistors

5. Observation of long-range exciton diffusion in highly ordered organic semiconductors

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