Monolayered Silicon and Germanium Monopnictide Semiconductors: Excellent Stability, High Absorbance, and Strain Engineering of Electronic Properties-Reference-Cited by-同舟云学术

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Monolayered Silicon and Germanium Monopnictide Semiconductors: Excellent Stability, High Absorbance, and Strain Engineering of Electronic Properties

Published:2018-02-05 Issue:6 Volume:10 Page:5133-5139
ISSN:1944-8244
Container-title:ACS Applied Materials & Interfaces
language:en
Short-container-title:ACS Appl. Mater. Interfaces

Author:

Cheng Ai-Qiang¹,He Zi¹,Zhao Jun²³^ORCID,Zeng Hui¹^ORCID,Chen Ru-Shan¹

Affiliation:

1. School of Electronic and Optical Engineering, Nanjing University of Science and Technology, Nanjing, Jiangsu 210094, China

2. School of Science, Nanjing University of Posts and Telecommunications, Nanjing, Jiangsu 210023, China

3. School of Chemistry and Chemical Engineering, Nanjing University, Nanjing, Jiangsu 210023, China

Funder

National Natural Science Foundation of China

Publisher

American Chemical Society (ACS)

Subject

General Materials Science

Link

https://pubs.acs.org/doi/pdf/10.1021/acsami.7b17560

Reference54 articles.

1. An atlas of two-dimensional materials

2. Recent Advances in Ultrathin Two-Dimensional Nanomaterials

3. Synthesis and chemistry of elemental 2D materials

4. Elemental Analogues of Graphene: Silicene, Germanene, Stanene, and Phosphorene

5. Recent development of two-dimensional transition metal dichalcogenides and their applications

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