Interface Properties Probed by Active THz Surface Emission in Graphene/SiO2/Si Heterostructures-Reference-Cited by-同舟云学术

Interface Properties Probed by Active THz Surface Emission in Graphene/SiO2/Si Heterostructures

Published:2018-09-25 Issue:41 Volume:10 Page:35599-35606
ISSN:1944-8244
Container-title:ACS Applied Materials & Interfaces
language:en
Short-container-title:ACS Appl. Mater. Interfaces

Author:

Yao Zehan¹,Zhu Lipeng¹,Huang Yuanyuan¹,Zhang Longhui¹,Du Wanyi¹,Lei Zhen¹,Soni Ajay²,Xu Xinlong¹^ORCID

Affiliation:

1. Shaanxi Joint Lab of Graphene, State Key Lab Incubation Base of Photoelectric Technology and Functional Materials, International Collaborative Center on Photoelectric Technology and Nano Functional Materials, Institute of Photonics and Photon-Technology, Northwest University, Xi’an 710069, China

2. School of Basic Sciences, Indian Institute of Technology, Mandi, Himachal Pradesh 175005, India

Funder

National Natural Science Foundation of China

Natural Science Foundation of Shaanxi Province

Publisher

American Chemical Society (ACS)

Subject

General Materials Science

Link

https://pubs.acs.org/doi/pdf/10.1021/acsami.8b11301

Reference46 articles.

1. Surface properties probed by second-harmonic and sum-frequency generation