Consecutive Junction-Induced Efficient Charge Separation Mechanisms for High-Performance MoS2/Quantum Dot Phototransistors-Reference-Cited by-同舟云学术

Consecutive Junction-Induced Efficient Charge Separation Mechanisms for High-Performance MoS2/Quantum Dot Phototransistors

Published:2018-10-19 Issue:44 Volume:10 Page:38264-38271
ISSN:1944-8244
Container-title:ACS Applied Materials & Interfaces
language:en
Short-container-title:ACS Appl. Mater. Interfaces

Author:

Pak Sangyeon¹^ORCID,Cho Yuljae¹^ORCID,Hong John¹^ORCID,Lee Juwon¹,Lee Sanghyo¹,Hou Bo¹^ORCID,An Geon-Hyoung¹,Lee Young-Woo²^ORCID,Jang Jae Eun³^ORCID,Im Hyunsik⁴,Morris Stephen M.¹,Sohn Jung Inn⁴^ORCID,Cha SeungNam¹⁵^ORCID,Kim Jong Min⁶

Affiliation:

1. Department of Engineering Science, University of Oxford, Parks Road, Oxford OX1 3PJ, United Kingdom

2. Department of Energy Systems, Soonchunhyang University, Asan31538, Chungcheongnam-do, Republic of Korea

3. Department of Information and Communication Engineering, Daegu Gyeongbuk Institute of Science and Technology (DGIST), Daegu 711-873, Republic of Korea

4. Division of Physics and Semiconductor Science, Dongguk University, Seoul 04620, Republic of Korea

5. Department of Physics, Sungkyunkwan University, Suwon 16419, Gyeonggi-do, Republic of Korea

6. Electrical Engineering Division, Department of Engineering, University of Cambridge, 9 JJ Thomson Avenue, Cambridge CB3 0FA, United Kingdom

Funder

Samsung

Royal Society

National Research Foundation of Korea

H2020 European Research Council

Publisher

American Chemical Society (ACS)

Subject

General Materials Science