Band-to-Band Tunneling-Dominated Thermo-Enhanced Field Electron Emission from p-Si/ZnO Nanoemitters-Reference-Cited by-同舟云学术

Band-to-Band Tunneling-Dominated Thermo-Enhanced Field Electron Emission from p-Si/ZnO Nanoemitters

Published:2018-06-04 Issue:25 Volume:10 Page:21518-21526
ISSN:1944-8244
Container-title:ACS Applied Materials & Interfaces
language:en
Short-container-title:ACS Appl. Mater. Interfaces

Author:

Huang Zhizhen¹,Huang Yifeng¹,Xu Ningsheng¹,Chen Jun¹^ORCID,She Juncong¹^ORCID,Deng Shaozhi¹

Affiliation:

1. State Key Laboratory of Optoelectronic Materials and Technologies, Guangdong Province Key Laboratory of Display Material and Technology, School of Electronics and Information Technology, Sun Yat-sen University, Guangzhou 510275, People’s Republic of China

Funder

Ministry of Science and Technology of the People's Republic of China

National Natural Science Foundation of China

Guangzhou Science Technology and Innovation Commission

Publisher

American Chemical Society (ACS)

Subject

General Materials Science

Link

https://pubs.acs.org/doi/pdf/10.1021/acsami.8b00140

Reference41 articles.

1. Nanofabrication of arrays of silicon field emitters with vertical silicon nanowire current limiters and self-aligned gates