Power Dissipation of WSe2 Field-Effect Transistors Probed by Low-Frequency Raman Thermometry-Reference-Cited by-同舟云学术

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Power Dissipation of WSe2 Field-Effect Transistors Probed by Low-Frequency Raman Thermometry

Published:2018-06-28 Issue:29 Volume:10 Page:24892-24898
ISSN:1944-8244
Container-title:ACS Applied Materials & Interfaces
language:en
Short-container-title:ACS Appl. Mater. Interfaces

Author:

Behranginia Amirhossein¹^ORCID,Hemmat Zahra¹,Majee Arnab K.²,Foss Cameron J.²,Yasaei Poya¹,Aksamija Zlatan²^ORCID,Salehi-Khojin Amin¹

Affiliation:

1. Department of Mechanical and Industrial Engineering, University of Illinois at Chicago, Chicago, Illinois 60607, United States

2. Electrical and Computer Engineering Department, University of Massachusetts Amherst, Amherst, Massachusetts 01003, United States

Funder

Division of Emerging Frontiers in Research and Innovation

Publisher

American Chemical Society (ACS)

Subject

General Materials Science

Link

https://pubs.acs.org/doi/pdf/10.1021/acsami.8b04724

Reference42 articles.

1. Two-dimensional semiconductors for transistors

2. Thermal properties of graphene and nanostructured carbon materials

3. Thermal Properties and Phonon Spectral Characterization of Synthetic Boron Phosphide for High Thermal Conductivity Applications

4. Integrated nanoelectronics for the future

5. Integrated Circuits and Logic Operations Based on Single-Layer MoS2

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