Study of Single Silicon Quantum Dots’ Band Gap and Single-Electron Charging Energies by Room Temperature Scanning Tunneling Microscopy
Author:
Affiliation:
1. Department of Electrical Engineering, Technion-Israel Institute of Technology, Haifa 32000, Israel
2. Solid State Institute, Technion-Israel Institute of Technology, Haifa 32000, Israel
Publisher
American Chemical Society (ACS)
Subject
Mechanical Engineering,Condensed Matter Physics,General Materials Science,General Chemistry,Bioengineering
Link
https://pubs.acs.org/doi/pdf/10.1021/nl080625b
Reference28 articles.
1. Single-electron transfer in metallic nanostructures
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5. Silicon nanocrystal non-volatile memory for embedded memory scaling
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