New Material Transistor with Record-High Field-Effect Mobility among Wide-Band-Gap Semiconductors
Author:
Affiliation:
1. Department of Electronics Engineering, National Chiao Tung University, Hsinchu 300, Taiwan
Funder
Ministry of Science and Technology, Taiwan
Publisher
American Chemical Society (ACS)
Subject
General Materials Science
Link
http://pubs.acs.org/doi/pdf/10.1021/acsami.6b04332
Reference38 articles.
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4. Static Performance of 20 A, 1200 V 4H-SiC Power MOSFETs at Temperatures of −187°C to 300°C
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