Stacking-Order Dependence of Strain in Bilayer Graphene: Implications for High-Performance Electronics-Reference-Cited by-同舟云学术

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Stacking-Order Dependence of Strain in Bilayer Graphene: Implications for High-Performance Electronics

Published:2024-04-30 Issue:9 Volume:7 Page:9893-9897
ISSN:2574-0970
Container-title:ACS Applied Nano Materials
language:en
Short-container-title:ACS Appl. Nano Mater.

Author:

Sim Jaegun¹²,Yoon Jooyoung¹,Lee Yejun³,Lee Ha Eun³,Jang Ho Won²^ORCID,Hong Byung Hee¹³^ORCID

Affiliation:

1. Graphene Square Inc. & Graphene Research Center, Advanced Institute of Convergence Technology, Suwon 16229, Republic of Korea

2. Department of Materials Science and Engineering, Research Institute of Advanced Materials Seoul National University, Seoul 08826, Republic of Korea

3. Department of Chemistry, Seoul National University, Gwanak_599, Gwanak-ro, Gwanak-gu, Seoul 151-747, Republic of Korea

Funder

National Research Foundation of Korea

Publisher

American Chemical Society (ACS)

Link

https://pubs.acs.org/doi/pdf/10.1021/acsanm.4c01088

Reference31 articles.

1. Two-dimensional gas of massless Dirac fermions in graphene

2. The rise of graphene

3. Ultrahigh electron mobility in suspended graphene

4. Measurement of the Elastic Properties and Intrinsic Strength of Monolayer Graphene

5. Intrinsic and extrinsic performance limits of graphene devices on SiO2

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