Growth Kinetics and Thermal Stress in the Sublimation Growth of Silicon Carbide-Reference-Cited by-同舟云学术

Growth Kinetics and Thermal Stress in the Sublimation Growth of Silicon Carbide

Published:2002-03-19 Issue:3 Volume:2 Page:213-220
ISSN:1528-7483
Container-title:Crystal Growth & Design
language:en
Short-container-title:Crystal Growth & Design

Author:

Ma Ronghui¹,Zhang Hui¹,Prasad Vish¹,Dudley Michael¹

Affiliation:

1. Department of Mechanical Engineering, Department of Materials Science and Engineering, State University of New York at Stony Brook, Stony Brook, New York 11794-2300, and College of Engineering, Florida International University, Miami, Florida 33174

Publisher

American Chemical Society (ACS)

Subject

Condensed Matter Physics,General Materials Science,General Chemistry

Link

https://pubs.acs.org/doi/pdf/10.1021/cg015572p

Reference19 articles.

1. Transport phenomena in sublimation growth of SiC bulk crystals

2. State of the art in the modelling of SiC sublimation growth

3. Numerical simulation of global heat transfer in reactors for SiC bulk crystal growth by physical vapor transport

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