Probing the Gate−Voltage-Dependent Surface Potential of Individual InAs Nanowires Using Random Telegraph Signals-Reference-Cited by-同舟云学术

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Probing the Gate−Voltage-Dependent Surface Potential of Individual InAs Nanowires Using Random Telegraph Signals

Published:2011-02-15 Issue:3 Volume:5 Page:2191-2199
ISSN:1936-0851
Container-title:ACS Nano
language:en
Short-container-title:ACS Nano

Author:

Salfi Joe¹²,Paradiso Nicola³,Roddaro Stefano³,Heun Stefan³,Nair Selvakumar V.¹⁴,Savelyev Igor G.¹⁴,Blumin Marina¹⁴,Beltram Fabio³,Ruda Harry E.¹⁴

Affiliation:

1. Centre for Nanotechnology, University of Toronto, 170 College Street, Toronto, Ontario M5S 3E4, Canada

2. Department of Electrical and Computer Engineering, University of Toronto, 10 King's College Road, Toronto, Ontario M5S 3G4

3. NEST, Istituto Nanoscienze-CNR and Scuola Normale Superiore, Piazza S.Silvestro 12, I-56127 Pisa, Italy

4. Department of Materials Science and Engineering, University of Toronto, 184 College Street, Toronto, Ontario M5S 3E4

Publisher

American Chemical Society (ACS)

Subject

General Physics and Astronomy,General Engineering,General Materials Science

Link

https://pubs.acs.org/doi/pdf/10.1021/nn1033967

Reference39 articles.

1. Semiconductor Nanowires: From Self-Organization to Patterned Growth

2. Control of III–V nanowire crystal structure by growth parameter tuning

3. Nanowire Transistor Performance Limits and Applications

4. Nanowire photonics

5. Nanowire-Based Sensors

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