On the Dissociative Chemisorption of Tris(dimethylamino)silane on Hydroxylated SiO2(001) Surface-Reference-Cited by-同舟云学术

On the Dissociative Chemisorption of Tris(dimethylamino)silane on Hydroxylated SiO2(001) Surface

Published:2009-05-11 Issue:22 Volume:113 Page:9731-9736
ISSN:1932-7447
Container-title:The Journal of Physical Chemistry C
language:en
Short-container-title:J. Phys. Chem. C

Author:

Li Jiaye¹,Wu Jinping¹,Zhou Chenggang¹,Han Bing¹,Karwacki Eugene J.¹,Xiao Manchao¹,Lei Xinjian¹,Cheng Hansong¹

Affiliation:

1. Engineering Research Center of Nano-Geomaterials of Ministry of Education and Institute of Theoretical Chemistry and Computational Materials Science, China University of Geosciences (Wuhan), Wuhan, China P. R. 43007, Air Products and Chemicals, Inc., 7201 Hamilton Boulevard, Allentown, Pennsylvania 18195, and Air Products and Chemicals, Inc., 1969 Palomar Oaks Way, Carlsbad, California 92011

Publisher

American Chemical Society (ACS)

Subject

Surfaces, Coatings and Films,Physical and Theoretical Chemistry,General Energy,Electronic, Optical and Magnetic Materials

Link

https://pubs.acs.org/doi/pdf/10.1021/jp900119b

Reference23 articles.

1. CMOS Device and Process Technology

2. Atomic Layer Deposition of Oxide Thin Films with Metal Alkoxides as Oxygen Sources

3. Shekhar, P.; Ming-Ren, L.; Qi, X.(Advanced Micro Devices, Inc.)Low resistance metal contact technology. US Patent 6,165,902, 2000.

4. Pin-shyne, C.(Taiwan Semiconductor Manufacturing Co.)Process sequence and mask layout to reduce junction leakage for a dual gate MOSFET device. US Patent 7,244,641, 2007.

5. Analysis of silicon oxynitride layers by the complementary use of elastic backscattering and nuclear reactions

Cited by 45 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Si precursor inhibitors for area selective deposition of Ru;Applied Surface Science;2024-10

2. Less Energetic Routes for the Production of SiOx Films from Tris(dimethylamino)silane by Plasma Enhanced Atomic Layer Deposition;Coatings;2023-10-04

3. Controlling the surface silanol density in capillary columns and planar silicon via the self-limiting, gas-phase deposition of tris(dimethylamino)methylsilane, and quantification of surface silanols after silanization by low energy ion scattering;Journal of Chromatography A;2023-09

4. Impact of aminosilane and silanol precursor structure on atomic layer deposition process;Applied Surface Science;2023-06

5. Computational Investigation of Precursor Blocking during Area-Selective Atomic Layer Deposition Using Aniline as a Small-Molecule Inhibitor;Langmuir;2023-03-15