Ab initio Based Configuration Interaction Study of the Electronic Spectrum of GeS
Author:
Affiliation:
1. Department of Chemistry, Physical Chemistry Section, Jadavpur University, Calcutta 700 032, India
Publisher
American Chemical Society (ACS)
Subject
Physical and Theoretical Chemistry
Link
https://pubs.acs.org/doi/pdf/10.1021/jp002650v
Reference42 articles.
1. Ultra-violet band systems of GeSe and GeTe, and their relations to those of similar molecules
2. The band spectrum of germanous sulphide in emission
3. The Ultra-Violet Absorption Spectra of GeO, GeS, GeSe and GeTe
4. Ultra-violet absorption band-systems of SiS, SiSe and SiTe
5. On theE1Σ+–X1Σ+System of SiO in the Vacuum Ultraviolet Region
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1. Potential energy curves and spectroscopic properties of GeS molecules: in ground states and low-lying excited states;Acta Physica Sinica;2016
2. Effects on spectroscopic parameters of several low-lying electronic states of GeS by core–valence correlation and relativistic corrections;Journal of Molecular Spectroscopy;2011-10
3. Electron impact excitation of molecules: Calculation of the cross section using the similarity function method and ab initio data for electronic structure;Chemical Physics Letters;2007-03
4. Configuration Interaction Study of the Low-Lying Electronic States of Silicon Monoxide;The Journal of Physical Chemistry A;2002-12-06
5. Electronic Spectrum of Tin Oxide: MRDCI Study;The Journal of Physical Chemistry A;2002-08-16
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