Growth and Characterization of 3C-SiC Films for Micro Electro Mechanical Systems (MEMS) Applications-Reference-Cited by-同舟云学术

Growth and Characterization of 3C-SiC Films for Micro Electro Mechanical Systems (MEMS) Applications

Published:2009-10-06 Issue:11 Volume:9 Page:4852-4859
ISSN:1528-7483
Container-title:Crystal Growth & Design
language:en
Short-container-title:Crystal Growth & Design

Author:

Bosi Matteo¹,Watts Bernard E.¹,Attolini Giovanni¹,Ferrari Claudio¹,Frigeri Cesare¹,Salviati Giancarlo¹,Poggi Antonella²,Mancarella Fulvio²,Roncaglia Alberto²,Martínez Oscar³,Hortelano Vanesa³

Affiliation:

1. IMEM-CNR Institute, Parco Area delle Scienze 37/A, 43100 Parma, Italy

2. IMM-CNR Institute, Area della Ricerca di Bologna, Via P. Gobetti 101, 40129 Bologna, Italy

3. Optronlab group, Departamento Física de la Materia Condensada, Edificio I+D, Universidad de Valladolid, Paseo de Belén 1, 47011-Valladolid, Spain

Publisher

American Chemical Society (ACS)

Subject

Condensed Matter Physics,General Materials Science,General Chemistry

Link

https://pubs.acs.org/doi/pdf/10.1021/cg900677c

Reference49 articles.

1. Silicon carbide as a new MEMS technology

2. Silicon carbide for microelectromechanical systems

3. Micro/nanomechanical characterization of ceramic films for microdevices

4. Status of silicon carbide (SiC) as a wide-bandgap semiconductor for high-temperature applications: A review

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