Pressure-Induced Orientation Control of the Growth of Epitaxial Silicon Nanowires-Reference-Cited by-同舟云学术

Pressure-Induced Orientation Control of the Growth of Epitaxial Silicon Nanowires

Published:2008-07-12 Issue:8 Volume:8 Page:2310-2314
ISSN:1530-6984
Container-title:Nano Letters
language:en
Short-container-title:Nano Lett.

Author:

Lugstein A.¹,Steinmair M.¹,Hyun Y. J.¹,Hauer G.¹,Pongratz P.¹,Bertagnolli E.¹

Affiliation:

1. Institute for Solid State Electronics, Vienna University of Technology, Floragasse 7, A-1040 Vienna, Austria, and Institute for Solid State Physics, Vienna University of Technology, Wiedner Hauptstr. 8/052, A-1040 Vienna, Austria

Publisher

American Chemical Society (ACS)

Subject

Mechanical Engineering,Condensed Matter Physics,General Materials Science,General Chemistry,Bioengineering

Link

https://pubs.acs.org/doi/pdf/10.1021/nl8011006

Reference47 articles.

1. A Laser Ablation Method for the Synthesis of Crystalline Semiconductor Nanowires

2. Single- and multi-wall carbon nanotube field-effect transistors

3. Doping and Electrical Transport in Silicon Nanowires

4. One-Dimensional Nanostructures: Synthesis, Characterization, and Applications

5. Electrical transport properties of individual gallium nitride nanowires synthesized by chemical-vapor-deposition

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