Surface Modification and Significant Reduction of Yellow/Blue Luminescence of Gallium Nitride-Reference-Cited by-同舟云学术

Surface Modification and Significant Reduction of Yellow/Blue Luminescence of Gallium Nitride

Published:2008-10-22 Issue:45 Volume:112 Page:17652-17656
ISSN:1932-7447
Container-title:The Journal of Physical Chemistry C
language:en
Short-container-title:J. Phys. Chem. C

Author:

Fang Z. L.¹,Kang J. Y.¹,Shen W. Z.¹

Affiliation:

1. Semiconductor Photonics Research Center and Department of Physics, Xiamen University, Xiamen 361005, People's Republic of China, and Department of Physics, Shanghai Jiao Tong University, Shanghai 200030, People's Republic of China

Publisher

American Chemical Society (ACS)

Subject

Surfaces, Coatings and Films,Physical and Theoretical Chemistry,General Energy,Electronic, Optical and Magnetic Materials

Link

https://pubs.acs.org/doi/pdf/10.1021/jp806202n

Reference37 articles.

1. Luminescence properties of defects in GaN

2. Mechanism of Yellow Luminescence in GaN

3. Optically detected magnetic resonance of GaN films grown by organometallic chemical-vapor deposition

4. Defect characterization in GaN: Possible influence of dislocations in the yellow-band features

5. Strain Induced Deep Electronic States around Threading Dislocations in GaN

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