Highly Tunable Negative Differential Resistance Device Based on Insulator-to-Metal Phase Transition of Vanadium Dioxide-Reference-Cited by-同舟云学术

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Highly Tunable Negative Differential Resistance Device Based on Insulator-to-Metal Phase Transition of Vanadium Dioxide

Published:2023-06-20 Issue:26 Volume:15 Page:31608-31616
ISSN:1944-8244
Container-title:ACS Applied Materials & Interfaces
language:en
Short-container-title:ACS Appl. Mater. Interfaces

Author:

Kim Jong-Hyun¹,Kim Seung-Geun¹,Kim Seung-Hwan²,Han Kyu-Hyun³,Kim Jiyoung⁴^ORCID,Yu Hyun-Yong¹³^ORCID

Affiliation:

1. Department of Semiconductor Systems Engineering, Korea University, 145, Anam-ro, Seongbuk-gu, Seoul 02841, Korea

2. Center for Spintronics, Korea Institute of Science and Technology (KIST), 5, Hwarang-ro 14-gil, Seongbuk-gu, Seoul 02792, Korea

3. School of Electrical Engineering, Korea University, 145, Anam-ro, Seongbuk-gu, Seoul 02841, Korea

4. Department of Materials Science and Engineering, University of Texas, Dallas, Richardson, Texas 75080-3021, United States

Funder

National Research Foundation of Korea

Publisher

American Chemical Society (ACS)

Subject

General Materials Science

Link

https://pubs.acs.org/doi/pdf/10.1021/acsami.3c03213

Reference60 articles.

1. Electronic Circuit with Controllable Negative Differential Resistance and its Applications

2. Dynamic Oscillation via Negative Differential Resistance in Type III Junction Organic/Two‐Dimensional and Oxide/Two‐Dimensional Transition Metal Dichalcogenide Diodes

3. Modeling Simplification and Dynamic Behavior of N-Shaped Locally-Active Memristor Based Oscillator

4. Resonant tunneling device with multiple negative differential resistance: Digital and signal processing applications with reduced circuit complexity

5. Double Negative Differential Resistance Device Based on Hafnium Disulfide/Pentacene Hybrid Structure

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