HfO2–ZrO2 Ferroelectric Capacitors with Superlattice Structure: Improving Fatigue Stability, Fatigue Recovery, and Switching Speed
Author:
Affiliation:
1. School of Microelectronics, Xidian University, Xi’an 710071, China
2. Xi’an UniIC Semiconductors Co., Ltd., Xi’an 710075, China
Funder
National Natural Science Foundation of China
Publisher
American Chemical Society (ACS)
Link
https://pubs.acs.org/doi/pdf/10.1021/acsami.3c15732
Reference37 articles.
1. Ferroelectricity in hafnium oxide thin films
2. Review and perspective on ferroelectric HfO2-based thin films for memory applications
3. Sung, M.; Rho, K.; Kim, J.; Cheon, J.; Choi, K.; Kim, D.; Em, H.; Park, G.; Woo, J.; Lee, Y.; Ko, J.; Kim, M.; Lee, G.; Ryu, S. W.; Sheen, D. S.; Joo, Y.; Kim, S.; Cho, C. H.; Na, M.; Kim, J. Low Voltage and High Speed 1Xnm 1T1C FE-RAM with Ultra-Thin 5nm HZO. 2021 IEEE International Electron Devices Meeting (IEDM); Institute of Electrical and Electronics Engineers: San Francisco, CA, USA, 2021; pp 33.3.1–33.3.4.
4. Müller, J.; Böscke, T. S.; Müller, S.; Yurchuk, E.; Polakowski, P.; Paul, J.; Martin, D.; Schenk, T.; Khullar, K.; Kersch, A.; Weinreich, W.; Riedel, S.; Seidel, K.; Kumar, A.; Arruda, T. M.; Kalinin, S. V.; Schlösser, T.; Boschke, R.; Bentum, R. van.; Schröder, U.; Mikolajick, T. Ferroelectric hafnium oxide: A CMOS-compatible and Highly Scalable Approach to Future Ferroelectric Memories. 2013 IEEE International Electron Devices Meeting (IEDM); Institute of Electrical and Electronics Engineers: Washington, DC, USA, 2013; pp 10.8.1–10.8.4.
5. Dünkel, S.; Trentzsch, M.; Richter, R.; Moll, P.; Fuchs, C.; Gehring, O.; Majer, M.; Wittek, S.; Mülle, B.; Melde, T.; Mulaosmanovic, H.; Slesazeck, S.; Müller, S.; Ocker, J.; Noack, M.; Löh, D.A.; Polakowski, P.; Müller, J.; Mikolajick, T.; Höntschel, J.; Rice, B.; Pelleri, J.; Beyer, S. A FeFET Based Super-low-power Ultra-fast Embedded NVM Technology for 22 nm FDSOI and Beyond. 2017 IEEE International Electron Devices Meeting (IEDM); Institute of Electrical and Electronics Engineers: San Francisco, CA, USA, 2017; pp 19.7.1–19.7.4.
Cited by 4 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Structural characteristics and polarization switching behaviors in HfO2-ZrO2 ferroelectric nanolaminates;Journal of Alloys and Compounds;2024-11
2. Improvement of memory storage capacity and prolongation of endurance/retention through H2 plasma treatment of IGZO/HZO structure;Journal of Applied Physics;2024-08-28
3. Phase transition kinetics and sublayer optimization of HfO2/ZrO2 superlattice ferroelectric thin films;Applied Physics Letters;2024-08-19
4. Influence of Biaxial Strain and Interfacial Layer Growth on Ferroelectric Wake-Up and Phase Transition Fields in ZrO2;ACS Applied Materials & Interfaces;2024-06-14
1.学者识别学者识别
2.学术分析学术分析
3.人才评估人才评估
"同舟云学术"是以全球学者为主线，采集、加工和组织学术论文而形成的新型学术文献查询和分析系统，可以对全球学者进行文献检索和人才价值评估。用户可以通过关注某些学科领域的顶尖人物而持续追踪该领域的学科进展和研究前沿。经过近期的数据扩容，当前同舟云学术共收录了国内外主流学术期刊6万余种，收集的期刊论文及会议论文总量共计约1.5亿篇，并以每天添加12000余篇中外论文的速度递增。我们也可以为用户提供个性化、定制化的学者数据。欢迎来电咨询！咨询电话：010-8811{复制后删除}0370
www.globalauthorid.com
TOP
Copyright © 2019-2024 北京同舟云网络信息技术有限公司 京公网安备11010802033243号 京ICP备18003416号-3