High-Performance Indium-Based Oxide Transistors with Multiple Channels Through Nanolaminate Structure Fabricated by Plasma-Enhanced Atomic Layer Deposition
Author:
Affiliation:
1. Department of Process Development, Samsung Display, Yongin 17113, South Korea
2. Department of Electronic Engineering, Hanyang University, Seoul 04763, South Korea
Funder
Samsung
LG Display
National Research Foundation of Korea
Publisher
American Chemical Society (ACS)
Subject
General Materials Science
Link
https://pubs.acs.org/doi/pdf/10.1021/acsami.3c00038
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