Calculation of Vertical Correlation Probability in Ge/Si(001) Shallow Island Quantum Dot Multilayer Systems-Reference-Cited by-同舟云学术

Calculation of Vertical Correlation Probability in Ge/Si(001) Shallow Island Quantum Dot Multilayer Systems

Published:2006-05-13 Issue:6 Volume:6 Page:1279-1283
ISSN:1530-6984
Container-title:Nano Letters
language:en
Short-container-title:Nano Lett.

Author:

Makeev Maxim A.¹,Madhukar Anupam²

Affiliation:

1. Collaboratory for Advanced Computing and Simulations, Mork Family Department of Chemical Engineering and Materials Science, University of Southern California, Los Angeles, California 90089-0242

2. Nanostructure Materials & Devices Laboratory, Mork Family Department of Chemical Engineering and Materials Science, and Department of Physics, University of Southern California, Los Angeles, California 90089-0241

Publisher

American Chemical Society (ACS)

Subject

Mechanical Engineering,Condensed Matter Physics,General Materials Science,General Chemistry,Bioengineering

Link

https://pubs.acs.org/doi/pdf/10.1021/nl0602600

Reference23 articles.

1. Vertically Self-Organized InAs Quantum Box Islands on GaAs(100)

2. Onset of incoherency and defect introduction in the initial stages of molecular beam epitaxical growth of highly strained InxGa1−xAs on GaAs(100)

3. Dislocation-free Stranski-Krastanow growth of Ge on Si(100)

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