Growth of Microscale In2O3 Islands on Y-Stabilized Zirconia(100) by Molecular Beam Epitaxy-Reference-Cited by-同舟云学术

Growth of Microscale In2O3 Islands on Y-Stabilized Zirconia(100) by Molecular Beam Epitaxy

Published:2008-06-28 Issue:14 Volume:20 Page:4551-4553
ISSN:0897-4756
Container-title:Chemistry of Materials
language:en
Short-container-title:Chem. Mater.

Author:

Bourlange A.¹,Payne D. J.¹,Jacobs R. M. J.¹,Egdell R. G.¹,Foord J. S.¹,Schertel A.¹,Dobson P. J.¹,Hutchison J. L.¹

Affiliation:

1. Department of Chemistry, Chemistry Research Laboratory, University of Oxford, Mansfield Road, Oxford OX1 3TA, United Kingdom, Carl Zeiss SMT AG, Carl-Zeiss-Strasse 56, 73447 Oberkochen, Germany, Oxford University Begbroke Science Park, Sandy Lane, Yarnton, Kidlington, Oxon OX5 1PF, United Kingdom, and Department of Materials, University of Oxford, Parks Road, Oxford OX1 3PH, United Kingdom

Publisher

American Chemical Society (ACS)

Subject

Materials Chemistry,General Chemical Engineering,General Chemistry

Link

https://pubs.acs.org/doi/pdf/10.1021/cm800984r

Reference15 articles.

1. Nucleation and strain relaxation at the InAs/GaAs(100) heterojunction

2. Semiconductor quantum dots and related systems: Electronic, optical, luminescence and related properties of low dimensional systems

3. Photoluminescence of Single InAs Quantum Dots Obtained by Self-Organized Growth on GaAs

4. Transparent conductors as solar energy materials: A panoramic review

5. Growth of In2O3(100) on Y-stabilized ZrO2(100) by O-plasma assisted molecular beam epitaxy

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