Seeding Atomic Layer Deposition of Alumina on Graphene with Yttria
Author:
Affiliation:
1. Department of Physics, University of South Florida, Tampa, Florida 33620, United States
2. Department of Materials Science and Engineering, University of Texas at Dallas, Richardson, Texas 75080, United States
Funder
National Science Foundation
Semiconductor Research Corporation
Publisher
American Chemical Society (ACS)
Subject
General Materials Science
Link
https://pubs.acs.org/doi/pdf/10.1021/am508154n
Reference26 articles.
1. Properties of Fluorinated Graphene Films
2. Atomic Layer Deposition of Dielectrics on Graphene Using Reversibly Physisorbed Ozone
3. Seeding Atomic Layer Deposition of High-k Dielectrics on Epitaxial Graphene with Organic Self-Assembled Monolayers
4. Scaling of Al2O3 dielectric for graphene field-effect transistors
5. Spin transport and relaxation in graphene
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