Stress Evolution during Ge Nanoparticles Growth in a SiO2 Matrix-Reference-Cited by-同舟云学术

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Stress Evolution during Ge Nanoparticles Growth in a SiO2 Matrix

Published:2018-11-14 Issue:23 Volume:57 Page:14939-14952
ISSN:0020-1669
Container-title:Inorganic Chemistry
language:en
Short-container-title:Inorg. Chem.

Author:

Pivac Branko¹^ORCID,Dubček Pavo¹,Dasović Jasna¹,Popović Jasminka¹,Radić Nikola¹,Bernstorff Sigrid²,Zavašnik Janez³⁴,Vlahovic Branislav⁵^ORCID

Affiliation:

1. Materials Physics, R. Bošković Institute, Bijenička 54, Zagreb 10000, Croatia

2. Elettra-Sincrotrone Trieste, SS 14, Km 163.5, in AREA Science Park, Basovizza 34149, Trieste, Italy

3. Jožef Stefan Institute, Jamova Cesta 39, Ljubljana 1000, Slovenia

4. Max-Planck-Institut für Eisenforschung GmbH, Max-Planck-Straße 1, Düsseldorf 40237, Germany

5. North Carolina Central University, Durham, North Carolina 27707, United States

Funder

Hrvatska Zaklada za Znanost

Publisher

American Chemical Society (ACS)

Subject

Inorganic Chemistry,Physical and Theoretical Chemistry

Link

https://pubs.acs.org/doi/pdf/10.1021/acs.inorgchem.8b02760

Reference44 articles.

1. Optical gain in silicon nanocrystals

2. Optical gain in monodispersed silicon nanocrystals

3. A silicon nanocrystals based memory

4. Effects of Si-rich oxide layer stoichiometry on the structural and optical properties of Si QD/SiO2multilayer films

5. Optical gain in different silicon nanocrystal systems

Cited by 1 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Formation of isolated Ge nanoparticles in thin continuous Ge/SiO2 multilayers;Vacuum;2020-09

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