Langmuir−Blodgett Monolayer Masked Chemical Etching: An Approach to Broadband Antireflective Surfaces-Reference-Cited by-同舟云学术

Langmuir−Blodgett Monolayer Masked Chemical Etching: An Approach to Broadband Antireflective Surfaces

Published:2009-04-03 Issue:9 Volume:21 Page:1802-1805
ISSN:0897-4756
Container-title:Chemistry of Materials
language:en
Short-container-title:Chem. Mater.

Author:

Hao Juanyuan¹,Lu Nan¹,Xu Hongbo¹,Wang Wentao¹,Gao Liguo¹,Chi Lifeng¹

Affiliation:

1. State Key Laboratory of Supramolecular Structure and Materials, Jilin University, 130012 Changchun, P. R. China, and Physikalisches Institut and Center for Nanotechnology (CeNTech), Westfälische Wilhelms-Universität, D-48149 Münster, Germany

Publisher

American Chemical Society (ACS)

Subject

Materials Chemistry,General Chemical Engineering,General Chemistry

Link

https://pubs.acs.org/doi/pdf/10.1021/cm802758e

Reference34 articles.

1. Dynamic etching of silicon for broadband antireflection applications

2. ZnO Nanostructures as Efficient Antireflection Layers in Solar Cells

3. High efficient light-emitting diodes with antireflection subwavelength gratings

4. High temperature resistant antireflective moth-eye structures for infrared radiation sensors

5. A Novel Silicon Nanotips Antireflection Surface for the Micro Sun Sensor

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