Ultralong and Defect-Free GaN Nanowires Grown by the HVPE Process-Reference-Cited by-同舟云学术

Ultralong and Defect-Free GaN Nanowires Grown by the HVPE Process

Published:2014-01-10 Issue:2 Volume:14 Page:559-562
ISSN:1530-6984
Container-title:Nano Letters
language:en
Short-container-title:Nano Lett.

Author:

Avit Geoffrey¹²,Lekhal Kaddour¹²,André Yamina¹²,Bougerol Catherine³,Réveret François¹²,Leymarie Joël¹²,Gil Evelyne¹²,Monier Guillaume¹²,Castelluci Dominique¹²,Trassoudaine Agnès¹²⁴

Affiliation:

1. Clermont Université, Université Blaise Pascal, Institut Pascal, BP 10448, F-63000 Clermont-Ferrand, France

2. CNRS, UMR6602, Institut Pascal, F-63171 Aubière, France

3. CEA-CNRS-UJF group, Nanophysique et Semiconducteurs, Institut Néel CNRS, 25 avenue des Martyrs, 38042 Grenoble cedex 9, France

4. Clermont Université, Université d’Auvergne, BP10448, F-63000 Clermont-Ferrand, France

Publisher

American Chemical Society (ACS)

Subject

Mechanical Engineering,Condensed Matter Physics,General Materials Science,General Chemistry,Bioengineering

Link

https://pubs.acs.org/doi/pdf/10.1021/nl403687h

Reference30 articles.

1. Self-Organized GaN Quantum Wire UV Lasers

2. Catalyst-Free InGaN/GaN Nanowire Light Emitting Diodes Grown on (001) Silicon by Molecular Beam Epitaxy

3. Dopant-Free GaN/AlN/AlGaN Radial Nanowire Heterostructures as High Electron Mobility Transistors

4. Noncontact Measurement of Charge Carrier Lifetime and Mobility in GaN Nanowires

5. Detection Limits for Nanoscale Biosensors

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