Point-Defect Populations As Induced by Cation/Anion Substitution in β-Si3N4 Lattice. A Cathodoluminescence Study
Author:
Affiliation:
1. Ceramic Physics Laboratory, Kyoto Institute of Technology, Matsugasaki, Sakyo-ku, 606-8585 Kyoto, Japan
2. AMEDICA Corporation, 1885 West 2100 South, Salt Lake City, Utah 84119, United States
Publisher
American Chemical Society (ACS)
Subject
Surfaces, Coatings and Films,Physical and Theoretical Chemistry,General Energy,Electronic, Optical and Magnetic Materials
Link
https://pubs.acs.org/doi/pdf/10.1021/jp509995c
Reference63 articles.
1. Silicon Nitride for High-Temperature Applications
2. Microstructural Design of Silicon Nitride with Improved Fracture Toughness: II, Effects of Yttria and Alumina Additives
3. Debonding behavior between β-Si3N4 whiskers and oxynitride glasses with or without an epitaxial β-SiAlON interfacial layer
4. Tailored microstructures of silicon nitride ceramics
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