Decoupling Effects of Surface Recombination and Barrier Height on p-Si(111) Photovoltage in Semiconductor|Liquid Junctions via Molecular Dipoles and Metal Oxides-Reference-Cited by-同舟云学术

Decoupling Effects of Surface Recombination and Barrier Height on p-Si(111) Photovoltage in Semiconductor|Liquid Junctions via Molecular Dipoles and Metal Oxides

Published:2019-01-14 Issue:1 Volume:2 Page:66-79
ISSN:2574-0962
Container-title:ACS Applied Energy Materials
language:en
Short-container-title:ACS Appl. Energy Mater.

Author:

Boucher Dylan G.¹,Speller James R.¹,Han Ruirui²,Osterloh Frank E.²^ORCID,Rose Michael J.¹^ORCID

Affiliation:

1. Department of Chemistry, The University of Texas at Austin, Austin, Texas 78712, United States

2. Department of Chemistry, One Shields Avenue, University of California—Davis, Davis, California 95616, United States

Funder

Welch Foundation

Basic Energy Sciences

Office of Naval Research Global

University of Texas at Austin

Publisher

American Chemical Society (ACS)

Subject

Electrical and Electronic Engineering,Materials Chemistry,Electrochemistry,Energy Engineering and Power Technology,Chemical Engineering (miscellaneous)

Link

https://pubs.acs.org/doi/pdf/10.1021/acsaem.8b01563

Reference65 articles.

1. Powering the planet: Chemical challenges in solar energy utilization

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3. Research opportunities to advance solar energy utilization

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5. Photoelectrochemical Hydrogen Evolution Using Si Microwire Arrays

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