Room-Temperature Si Etching in NO/F2 Gases and the Investigation of Surface Reaction Mechanisms-Reference-Cited by-同舟云学术

Room-Temperature Si Etching in NO/F2 Gases and the Investigation of Surface Reaction Mechanisms

Published:2013-03-05 Issue:10 Volume:117 Page:5118-5125
ISSN:1932-7447
Container-title:The Journal of Physical Chemistry C
language:en
Short-container-title:J. Phys. Chem. C

Author:

Tajima Satomi¹,Hayashi Toshio¹,Ishikawa Kenji¹,Sekine Makoto¹,Hori Masaru¹

Affiliation:

1. Plasma Nanotechnology Research Center (PLANT), Graduate School of Engineering, Nagoya University, Furo-cho, Chikusa-ku, Nagoya, Aichi, Japan 464-8603

Publisher

American Chemical Society (ACS)

Subject

Surfaces, Coatings and Films,Physical and Theoretical Chemistry,General Energy,Electronic, Optical and Magnetic Materials

Link

https://pubs.acs.org/doi/pdf/10.1021/jp3119132

Reference40 articles.

1. Isotropic etching of silicon in fluorine gas for MEMS micromachining

2. Evaluation of trifluoroacetic anhydride as an alternative plasma enhanced chemical vapor deposition chamber clean chemistry

3. Etch rates for micromachining processing

Cited by 7 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Selective etching of SiN against SiO2 and poly-Si films in hydrofluoroethane chemistry with a mixture of CH2FCHF2, O2, and Ar;Applied Surface Science;2021-03

2. Enhanced silicon nitride etching in the presence of F atoms: Quantum chemistry simulation;Journal of Vacuum Science & Technology A;2018-11

3. Progress and prospects in nanoscale dry processes: How can we control atomic layer reactions?;Japanese Journal of Applied Physics;2017-06-01

4. Plasma-Assisted Adhesion Improvement of Various Materials Used for Power Device Packaging;Journal of Japan Institute of Electronics Packaging;2016

5. Evaluation of the Difference in the Rate Coefficients of F2 + NOx (x = 1 or 2) → F + FNOx by the Stereochemical Arrangement Using the Density Functional Theory;The Journal of Physical Chemistry A;2015-02-10