The Formation of an Almost Full Atomic Monolayer via Surface Modification by N2O-Plasma in Atomic Layer Deposition of ZrO2 Thin Films-Reference-Cited by-同舟云学术

The Formation of an Almost Full Atomic Monolayer via Surface Modification by N2O-Plasma in Atomic Layer Deposition of ZrO2 Thin Films

Published:2009-09-18 Issue:19 Volume:21 Page:4374-4379
ISSN:0897-4756
Container-title:Chemistry of Materials
language:en
Short-container-title:Chem. Mater.

Author:

Won Seok-Jun¹²,Kim Ju-Youn²,Choi Gyu-Jin¹,Heo Jaeyeong¹,Hwang Cheol Seong¹,Kim Hyeong Joon¹

Affiliation:

1. Department of Materials Science and Engineering, and Inter-University Semiconductor Research Center, Seoul National University, San 56-1, Shillim-Dong, Kwanak-Gu, Seoul 151-744, Korea

2. Technology Development Team 2, System-LSI Division, Samsung Electronics Co., Ltd., San 24, Nongseo-Dong, Kiheung-Gu, Yongin-City, Kyungki-Do 449-900, Korea

Publisher

American Chemical Society (ACS)

Subject

Materials Chemistry,General Chemical Engineering,General Chemistry

Link

https://pubs.acs.org/doi/pdf/10.1021/cm9005234

Reference20 articles.

1. Nanostructured TiO2 membranes by atomic layer deposition

2. Monocrystalline spinel nanotube fabrication based on the Kirkendall effect

3. Exploitation of atomic layer deposition for nanostructured materials

4. Ferromagnetic nanotubes by atomic layer deposition in anodic alumina membranes

5. Atomic Layer Deposition on Suspended Single-Walled Carbon Nanotubes via Gas-Phase Noncovalent Functionalization

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