Effects of Interface States on Photoexcited Carriers in ZnO/Zn2SnO4 Type-II Radial Heterostructure Nanowires-Reference-Cited by-同舟云学术

Effects of Interface States on Photoexcited Carriers in ZnO/Zn2SnO4 Type-II Radial Heterostructure Nanowires

Published:2014-03-03 Issue:6 Volume:6 Page:4057-4062
ISSN:1944-8244
Container-title:ACS Applied Materials & Interfaces
language:en
Short-container-title:ACS Appl. Mater. Interfaces

Author:

Cheng Baochang¹,Wu Guohong¹,Ouyang Zhiyong¹,Su Xiaohui¹,Xiao Yanhe¹,Lei Shuijin¹

Affiliation:

1. School of Materials Science and Engineering and ‡Nanoscale Science and Technology Laboratory, Institute for Advanced Study, Nanchang University, Jiangxi 330031, P. R. China

Publisher

American Chemical Society (ACS)

Subject

General Materials Science

Link

https://pubs.acs.org/doi/pdf/10.1021/am405569k

Reference52 articles.

1. Low Operating Voltage Single ZnO Nanowire Field-Effect Transistors Enabled by Self-Assembled Organic Gate Nanodielectrics

2. Flexible Inorganic Nanowire Light-Emitting Diode

3. Nanowire Ultraviolet Photodetectors and Optical Switches

4. Brush-Like Hierarchical ZnO Nanostructures: Synthesis, Photoluminescence and Gas Sensor Properties

5. Nanowire dye-sensitized solar cells

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