Numerical Simulation of an Entire Wafer Surface during Ozone-Based Wet Chemical Etching-Reference-Cited by-同舟云学术

Numerical Simulation of an Entire Wafer Surface during Ozone-Based Wet Chemical Etching

Published:2020-09-16 Issue:40 Volume:59 Page:17680-17688
ISSN:0888-5885
Container-title:Industrial & Engineering Chemistry Research
language:en
Short-container-title:Ind. Eng. Chem. Res.

Author:

Mohr Lena¹^ORCID,Dannenberg Tobias¹,Moldovan Anamaria¹,Zimmer Martin¹,Müller Claas²

Affiliation:

1. Fraunhofer Institute for Solar Energy Systems ISE, Heidenhofstr. 2, 79110 Freiburg, Germany

2. Albert-Ludwigs-Universität, Georges-Köhler-Allee 103, 79110 Freiburg, Germany

Publisher

American Chemical Society (ACS)

Subject

Industrial and Manufacturing Engineering,General Chemical Engineering,General Chemistry

Link

https://pubs.acs.org/doi/pdf/10.1021/acs.iecr.0c03382

Reference41 articles.

1. Moldovan, A. Ozonbasierte Reinigungs- und Konditionierungsverfahren für die Herstellung hocheffizienter Silizium Solarzellen. PhD Thesis; Solare Energie- und Systemforschung/Solar energy and systems research/Fraunhofer-Institut für Solare Energiesysteme ISE; Fraunhofer Verlag: Stuttgart, 2016.

2. Mohr, L.; Krick, T.; Zimmer, M.; Fischer, A.; Moldovan, A. Numerical simulation of an ozone-based wet-chemical etching. AIP Conference Proceedings, Volume 2147, Issue 1, id.050007; p 50007.

3. Microelectromechanical systems (MEMS): fabrication, design and applications

4. Surface Chemical Reaction Model of Silicon Dioxide Film Etching by Dilute Hydrogen Fluoride Using a Single Wafer Wet Etcher

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