Tailoring Kinetics on a Topological Insulator Surface by Defect-Induced Strain: Pb Mobility on Bi2Te3-Reference-Cited by-同舟云学术

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Tailoring Kinetics on a Topological Insulator Surface by Defect-Induced Strain: Pb Mobility on Bi2Te3

Published:2016-06-20 Issue:7 Volume:16 Page:4454-4461
ISSN:1530-6984
Container-title:Nano Letters
language:en
Short-container-title:Nano Lett.

Author:

Huang Wen-Kai¹,Zhang Kai-Wen¹,Yang Chao-Long¹,Ding Haifeng¹²,Wan Xiangang¹²,Li Shao-Chun¹²,Evans James W.³⁴,Han Yong³⁴

Affiliation:

1. National Laboratory of Solid State Microstructures, School of Physics, Nanjing University, Nanjing 210093, P. R. China

2. Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing 210093, P. R. China

3. Department of Physics and Astronomy, Iowa State University, Ames, Iowa 50011, United States

4. Ames Laboratory—U.S. Department of Energy, Iowa State University, Ames, Iowa 50011, United States

Funder

Division of Chemistry

Ministry of Science and Technology of the People's Republic of China

National Natural Science Foundation of China

Publisher

American Chemical Society (ACS)

Subject

Mechanical Engineering,Condensed Matter Physics,General Materials Science,General Chemistry,Bioengineering

Link

https://pubs.acs.org/doi/pdf/10.1021/acs.nanolett.6b01604

Reference47 articles.

1. The birth of topological insulators

2. Colloquium: Topological insulators

3. Topological insulators and superconductors

4. Non-Abelian anyons and topological quantum computation

5. Spintronics: Fundamentals and applications

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