Long-Range Lattice Engineering of MoTe2 by a 2D Electride-Reference-Cited by-同舟云学术

Long-Range Lattice Engineering of MoTe2 by a 2D Electride

Published:2017-05-12 Issue:6 Volume:17 Page:3363-3368
ISSN:1530-6984
Container-title:Nano Letters
language:en
Short-container-title:Nano Lett.

Author:

Kim Sera¹,Song Seunghyun²,Park Jongho¹²,Yu Ho Sung¹²,Cho Suyeon²,Kim Dohyun¹^ORCID,Baik Jaeyoon³,Choe Duk-Hyun⁴,Chang K. J.⁴^ORCID,Lee Young Hee¹²^ORCID,Kim Sung Wng¹^ORCID,Yang Heejun¹^ORCID

Affiliation:

1. Department of Energy Science, Sungkyunkwan University, Suwon 16419, Korea

2. Center for Integrated Nanostructure Physics, Institute for Basic Science (IBS), Suwon 16419, Korea

3. Pohang Accelerator Laboratory, Pohang University of Science and Technology, Pohang 790-784, Korea

4. Department of Physics, Korea Advanced Institute of Science and Technology, Daejeon 34141, Korea

Funder

Samsung

National Research Foundation of Korea

Institute for Basic Science

Publisher

American Chemical Society (ACS)

Subject

Mechanical Engineering,Condensed Matter Physics,General Materials Science,General Chemistry,Bioengineering

Link

https://pubs.acs.org/doi/pdf/10.1021/acs.nanolett.6b05199

Reference33 articles.

1. Bandgap opening in few-layered monoclinic MoTe2

2. Evidence for two-dimensional Ising superconductivity in gated MoS2

3. Ambipolar Insulator-to-Metal Transition in Black Phosphorus by Ionic-Liquid Gating

4. Controlling the Electronic Structure of Bilayer Graphene

5. Phase-engineered low-resistance contacts for ultrathin MoS2 transistors

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