Ferroelectric-Gated InSe Photodetectors with High On/Off Ratios and Photoresponsivity-Reference-Cited by-同舟云学术

Ferroelectric-Gated InSe Photodetectors with High On/Off Ratios and Photoresponsivity

Published:2020-08-21 Issue:9 Volume:20 Page:6666-6673
ISSN:1530-6984
Container-title:Nano Letters
language:en
Short-container-title:Nano Lett.

Author:

Liu Li¹²,Wu Liangmei²,Wang Aiwei²,Liu Hongtao²,Ma Ruisong²,Wu Kang²,Chen Jiancui²,Zhou Zhang²,Tian Yuan¹,Yang Haitao²,Shen Chengmin²³,Bao Lihong²³^ORCID,Qin Zhihui¹,Pantelides Sokrates T.²⁴^ORCID,Gao Hong-Jun²³^ORCID

Affiliation:

1. Key Laboratory for Micro/Nano Optoelectronic Devices of Ministry of Education & Hunan Provincial Key Laboratory of Low-Dimensional Structural Physics and Devices, School of Physics and Electronics, Hunan University, Changsha 410082, People’s Republic of China

2. Institute of Physics & University of Chinese Academy of Sciences, Chinese Academy of Sciences, Beijing, 100190, People’s Republic of China

3. Songshan Lake Materials Laboratory, Dongguan, Guangdong 523808, People’s Republic of China

4. Department of Physics and Astronomy and Department of Electrical Engineering and Computer Science, Vanderbilt University, Nashville, Tennessee 37235, United States

Funder

Ministry of Science and Technology of the People's Republic of China

Hunan Provincial Innovation Foundation for Postgraduate

Youth Innovation Promotion Association of the Chinese Academy of Sciences

National Natural Science Foundation of China

Chinese Academy of Sciences

Publisher

American Chemical Society (ACS)

Subject

Mechanical Engineering,Condensed Matter Physics,General Materials Science,General Chemistry,Bioengineering

Link

https://pubs.acs.org/doi/pdf/10.1021/acs.nanolett.0c02448