Fast Magneto-Ionic Switching of Interface Anisotropy Using Yttria-Stabilized Zirconia Gate Oxide-Reference-Cited by-同舟云学术

Fast Magneto-Ionic Switching of Interface Anisotropy Using Yttria-Stabilized Zirconia Gate Oxide

Published:2020-04-28 Issue:5 Volume:20 Page:3435-3441
ISSN:1530-6984
Container-title:Nano Letters
language:en
Short-container-title:Nano Lett.

Author:

Lee Ki-Young¹^ORCID,Jo Sujin¹,Tan Aik Jun²,Huang Mantao²^ORCID,Choi Dongwon¹,Park Jung Hoon³,Ji Ho-Il³⁴^ORCID,Son Ji-Won³⁵^ORCID,Chang Joonyeon¹⁶,Beach Geoffrey S. D.²,Woo Seonghoon¹^ORCID

Affiliation:

1. Center for Spintronics, Korea Institute of Science and Technology, Seoul 02792, Korea

2. Department of Materials Science and Engineering, Massachusetts Institute of Technology, Cambridge, Massachusetts 02139, United States

3. Center for Energy Materials Research, Korea Institute of Science and Technology, Seoul 02792, Korea

4. Nanomaterials Science and Engineering, Korea University of Science and Technology (UST) KIST Campus, Seoul 02792, Korea

5. Graduate School of Energy and Environment (KU-KIST GREEN SCHOOL), Korea University, Seoul 02841, Korea

6. Department of Materials Science & Engineering, Yonsei University, Seoul 03722, Korea

Funder

Division of Electrical, Communications and Cyber Systems

Korea Institute of Science and Technology

Ministry of Science, ICT and Future Planning

Yonsei-KIST Convergence Research Institute

Publisher

American Chemical Society (ACS)

Subject

Mechanical Engineering,Condensed Matter Physics,General Materials Science,General Chemistry,Bioengineering

Link

http://pubs.acs.org/doi/pdf/10.1021/acs.nanolett.0c00340

Reference30 articles.

1. Spintronics: A Spin-Based Electronics Vision for the Future

2. Recent Progress in the Voltage-Controlled Magnetic Anisotropy Effect and the Challenges Faced in Developing Voltage-Torque MRAM

3. Spin-transfer torque magnetoresistive random-access memory technologies for normally off computing (invited)

4. Materials for spin-transfer-torque magnetoresistive random-access memory

5. VOLTAGE-CONTROLLED MAGNETIC ANISOTROPY IN SPINTRONIC DEVICES

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