Two-Dimensional Materials Inserted at the Metal/Semiconductor Interface: Attractive Candidates for Semiconductor Device Contacts-Reference-Cited by-同舟云学术

Two-Dimensional Materials Inserted at the Metal/Semiconductor Interface: Attractive Candidates for Semiconductor Device Contacts

Published:2018-07-23 Issue:8 Volume:18 Page:4878-4884
ISSN:1530-6984
Container-title:Nano Letters
language:en
Short-container-title:Nano Lett.

Author:

Lee Min-Hyun¹,Cho Yeonchoo¹,Byun Kyung-Eun¹,Shin Keun Wook¹,Nam Seong-Geol¹,Kim Changhyun¹,Kim Haeryong¹,Han Sang-A²,Kim Sang-Woo²^ORCID,Shin Hyeon-Jin¹^ORCID,Park Seongjun¹

Affiliation:

1. Samsung Advanced Institute of Technology, Suwon 443-803, Republic of Korea

2. School of Advanced Materials Science and Engineering, Sungkyunkwan University (SKKU), 2066 Seobu-ro, Jangan-gu, Suwon, Gyeonggi-do 440-746, Republic of Korea

Publisher

American Chemical Society (ACS)

Subject

Mechanical Engineering,Condensed Matter Physics,General Materials Science,General Chemistry,Bioengineering

Link

https://pubs.acs.org/doi/pdf/10.1021/acs.nanolett.8b01509

Reference37 articles.

1. CMOS scaling into the nanometer regime

2. Intel Processors Overview. http://www.intel.com/content/www/us/en/products/processors.html (accessed April 19, 2017).

3. Samsung Semiconductor Global. http://www.samsung.com/semiconductor/about-us/news/ (accessed April 19, 2017).

4. 2015 International Technology roadmap for Semiconductors (ITRS). http://www.itrs2.net/ (accessed April 19, 2017).

Cited by 34 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Interfacial Properties of Anisotropic Monolayer SiAs Transistors;Nanomaterials;2024-01-23

2. In-Depth Analysis on Self Alignment Effect of the Fermi-Level Using Graphene on Both n- and p-Type Semiconductors;ACS Applied Materials & Interfaces;2023-11-30

3. Screen printable fire through nickel contacts for silicon solar cells;Solar Energy Materials and Solar Cells;2023-10

4. Electrical and photoresponse properties of metal–polymer–semiconductor device with TMPTA interface material;Journal of Materials Science: Materials in Electronics;2023-09

5. Monolayer MoS2-based transistors with low contact resistance by inserting ultrathin Al2O3 interfacial layer;Science China Technological Sciences;2023-04-24