Integer and Fractional Quantum Hall effect in Ultrahigh Quality Few-layer Black Phosphorus Transistors-Reference-Cited by-同舟云学术

Integer and Fractional Quantum Hall effect in Ultrahigh Quality Few-layer Black Phosphorus Transistors

Published:2017-12-28 Issue:1 Volume:18 Page:229-234
ISSN:1530-6984
Container-title:Nano Letters
language:en
Short-container-title:Nano Lett.

Author:

Yang Jiawei¹,Tran Son¹,Wu Jason²,Che Shi¹,Stepanov Petr¹,Taniguchi Takashi³,Watanabe Kenji³,Baek Hongwoo⁴,Smirnov Dmitry⁴,Chen Ruoyu¹^ORCID,Lau Chun Ning¹^ORCID

Affiliation:

1. Department of Physics, Ohio State University, Columbus, Ohio 43220, United States

2. Department of Physics and Astronomy, University of California, Riverside, California 92521, United States

3. National Institute for Materials Science, 1-1 Namiki, Tsukuba, Ibaraki 305-0044, Japan

4. National High Magnetic Field Laboratory, Tallahassee, Florida 32310, United States

Funder

Japan Society for the Promotion of Science

Division of Electrical, Communications and Cyber Systems

Division of Materials Research

State of Florida

Publisher

American Chemical Society (ACS)

Subject

Mechanical Engineering,Condensed Matter Physics,General Materials Science,General Chemistry,Bioengineering

Link

https://pubs.acs.org/doi/pdf/10.1021/acs.nanolett.7b03954

Reference63 articles.

1. The Quantum Hall Effect

2. Observation of a transition from a topologically ordered to a spontaneously broken symmetry phase

3. Nonabelions in the fractional quantum hall effect

4. Observation of an even-denominator quantum number in the fractional quantum Hall effect

5. Fractional quantum Hall effect in very-low-density GaAs/AlxGa1−xAs heterostructures

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