Combining 2 nm Spatial Resolution and 0.02% Precision for Deformation Mapping of Semiconductor Specimens in a Transmission Electron Microscope by Precession Electron Diffraction-Reference-Cited by-同舟云学术

Combining 2 nm Spatial Resolution and 0.02% Precision for Deformation Mapping of Semiconductor Specimens in a Transmission Electron Microscope by Precession Electron Diffraction

Published:2015-07-30 Issue:8 Volume:15 Page:5289-5294
ISSN:1530-6984
Container-title:Nano Letters
language:en
Short-container-title:Nano Lett.

Author:

Cooper David¹²,Bernier Nicolas¹²,Rouvière Jean-Luc¹³

Affiliation:

1. University Grenoble Alpes, F-38000 Grenoble, France

2. CEA, LETI, MINATEC Campus, 17 rue des Martyrs, 38054 Grenoble Cedex 9, France

3. CEA, INAC, MINATEC Campus, 17 rue des Martyrs, 38054 Grenoble Cedex 9, France

Funder

European Research Council

Publisher

American Chemical Society (ACS)

Subject

Mechanical Engineering,Condensed Matter Physics,General Materials Science,General Chemistry,Bioengineering

Link

https://pubs.acs.org/doi/pdf/10.1021/acs.nanolett.5b01614

Reference33 articles.

1. Strain: A Solution for Higher Carrier Mobility in Nanoscale MOSFETs

2. Strain Tuning of Ferroelectric Thin Films

3. Domain wall nanoelectronics

4. Strain measurement at the nanoscale: Comparison between convergent beam electron diffraction, nano-beam electron diffraction, high resolution imaging and dark field electron holography

5. Quantitative measurement of displacement and strain fields from HREM micrographs

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