Transport Properties of a MoS2/WSe2 Heterojunction Transistor and Its Potential for Application-Reference-Cited by-同舟云学术

Transport Properties of a MoS2/WSe2 Heterojunction Transistor and Its Potential for Application

Published:2016-01-27 Issue:2 Volume:16 Page:1359-1366
ISSN:1530-6984
Container-title:Nano Letters
language:en
Short-container-title:Nano Lett.

Author:

Nourbakhsh Amirhasan¹,Zubair Ahmad¹,Dresselhaus Mildred S.¹,Palacios Tomás¹

Affiliation:

1. Department of Electrical Engineering and Computer Sciences and ‡Department of Physics, Massachusetts Institute of Technology, Cambridge, Massachusetts 02139, United States

Funder

Air Force Office of Scientific Research

Office of Naval Research

Publisher

American Chemical Society (ACS)

Subject

Mechanical Engineering,Condensed Matter Physics,General Materials Science,General Chemistry,Bioengineering

Link

https://pubs.acs.org/doi/pdf/10.1021/acs.nanolett.5b04791

Reference44 articles.

1. Optoelectronic devices based on electrically tunable p–n diodes in a monolayer dichalcogenide

2. Monolayer semiconductor nanocavity lasers with ultralow thresholds

3. Ultrasensitive photodetectors based on monolayer MoS2

4. Quantum spin Hall effect in two-dimensional transition metal dichalcogenides

5. Integrated Circuits Based on Bilayer MoS2 Transistors

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