Transport Properties of a MoS2/WSe2 Heterojunction Transistor and Its Potential for Application
Author:
Affiliation:
1. Department of Electrical Engineering and Computer Sciences and ‡Department of Physics, Massachusetts Institute of Technology, Cambridge, Massachusetts 02139, United States
Funder
Air Force Office of Scientific Research
Office of Naval Research
Publisher
American Chemical Society (ACS)
Subject
Mechanical Engineering,Condensed Matter Physics,General Materials Science,General Chemistry,Bioengineering
Link
https://pubs.acs.org/doi/pdf/10.1021/acs.nanolett.5b04791
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5. Integrated Circuits Based on Bilayer MoS2 Transistors
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