Tunable Electrical and Optical Characteristics in Monolayer Graphene and Few-Layer MoS2 Heterostructure Devices-Reference-Cited by-同舟云学术

Tunable Electrical and Optical Characteristics in Monolayer Graphene and Few-Layer MoS2 Heterostructure Devices

Published:2015-07-01 Issue:8 Volume:15 Page:5017-5024
ISSN:1530-6984
Container-title:Nano Letters
language:en
Short-container-title:Nano Lett.

Author:

Rathi Servin,Lee Inyeal,Lim Dongsuk,Wang Jianwei,Ochiai Yuichi¹,Aoki Nobuyuki¹,Watanabe Kenji²,Taniguchi Takashi²,Lee Gwan-Hyoung³,Yu Young-Jun⁴,Kim Philip⁵,Kim Gil-Ho

Affiliation:

1. Graduate School of Advanced Integration Science, Chiba University, 1-33 Yayoi-cho, Inage-ku, Chiba 263-8522, Japan

2. Advanced Materials Laboratory, National Institute for Materials Science, 1-1 Namiki, Tsukuba, 305-0044, Japan

3. Department of Material Science and Engineering, Yonsei University, Seoul 120-749, Korea

4. Creative Research Center for Graphene Electronics and Telecommunications Research Institute (ETRI), Daejeon 305-700, Korea

5. Department of Physics, Harvard University, Cambridge, Massachusetts 02138, United States

Funder

National Research Foundation of Korea

Publisher

American Chemical Society (ACS)

Subject

Mechanical Engineering,Condensed Matter Physics,General Materials Science,General Chemistry,Bioengineering

Link

https://pubs.acs.org/doi/pdf/10.1021/acs.nanolett.5b01030

Reference44 articles.

1. Highly efficient gate-tunable photocurrent generation in vertical heterostructures of layered materials

2. Graphene–MoS2 hybrid structures for multifunctional photoresponsive memory devices

3. Ultrasensitive photodetectors based on monolayer MoS2

4. Vertically stacked multi-heterostructures of layered materials for logic transistors and complementary inverters

5. Graphene Barristor, a Triode Device with a Gate-Controlled Schottky Barrier

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