STEM Image Analysis Based on Deep Learning: Identification of Vacancy Defects and Polymorphs of MoS<sub>2</sub>-Reference-Cited by-同舟云学术

STEM Image Analysis Based on Deep Learning: Identification of Vacancy Defects and Polymorphs of MoS₂

Published:2022-06-08 Issue:12 Volume:22 Page:4677-4685
ISSN:1530-6984
Container-title:Nano Letters
language:en
Short-container-title:Nano Lett.

Author:

Lee Kihyun¹^ORCID,Park Jinsub¹,Choi Soyeon¹,Lee Yangjin¹²,Lee Sol¹²^ORCID,Jung Joowon¹,Lee Jong-Young³,Ullah Farman⁴,Tahir Zeeshan⁴^ORCID,Kim Yong Soo⁴,Lee Gwan-Hyoung³⁵⁶⁷^ORCID,Kim Kwanpyo¹²

Affiliation:

1. Department of Physics, Yonsei University, Seoul 03722, Korea

2. Center for Nanomedicine, Institute for Basic Science (IBS), Seoul 03722, Korea

3. Department of Material Science and Engineering, Seoul National University, Seoul 08826, Korea

4. Department of Physics and Energy Harvest Storage Research Center, University of Ulsan, Ulsan 44610, Korea

5. Research Institute of Advanced Materials, Seoul National University, Seoul 08826, Korea

6. Institute of Engineering Research, Seoul National University, Seoul 08826, Korea

7. Institute of Applied Physics, Seoul National University, Seoul 08826, Korea

Funder

National Research Foundation of Korea

Institute for Basic Science

Seoul National University

Publisher

American Chemical Society (ACS)

Subject

Mechanical Engineering,Condensed Matter Physics,General Materials Science,General Chemistry,Bioengineering

Link

https://pubs.acs.org/doi/pdf/10.1021/acs.nanolett.2c00550

Reference46 articles.

1. Defect Engineering of Two-Dimensional Transition-Metal Dichalcogenides: Applications, Challenges, and Opportunities

2. Disorder in van der Waals heterostructures of 2D materials

3. Phase engineering of transition metal dichalcogenides

4. From Point Defects in Graphene to Two-Dimensional Amorphous Carbon

5. Accurate Measurement of Electron Beam Induced Displacement Cross Sections for Single-Layer Graphene

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