Electrically Tunable Antiferroelectric to Paraelectric Switching in a Semiconductor-Reference-Cited by-同舟云学术

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Electrically Tunable Antiferroelectric to Paraelectric Switching in a Semiconductor

Published:2022-05-13 Issue:10 Volume:22 Page:4083-4089
ISSN:1530-6984
Container-title:Nano Letters
language:en
Short-container-title:Nano Lett.

Author:

Bai Hui¹²,Su Xianli¹^ORCID,Zhang Qingjie¹,Uher Ctirad³,Tang Xinfeng¹^ORCID,Wu Jinsong¹²^ORCID

Affiliation:

1. State Key Laboratory of Advanced Technology for Materials Synthesis and Processing, Wuhan University of Technology, Wuhan 430070, China

2. Nanostructure Research Center, Wuhan University of Technology, Wuhan 430070, China

3. Department of Physics, University of Michigan, Ann Arbor, Michigan 48109, United States

Funder

Ministry of Education of the People's Republic of China

Ministry of Science and Technology of the People's Republic of China

National Natural Science Foundation of China

Publisher

American Chemical Society (ACS)

Subject

Mechanical Engineering,Condensed Matter Physics,General Materials Science,General Chemistry,Bioengineering

Link

https://pubs.acs.org/doi/pdf/10.1021/acs.nanolett.2c00787

Reference39 articles.

1. Principles and Applications of Ferroelectrics and Related Materials

2. A Potential Sn-Based Hybrid Perovskite Ferroelectric Semiconductor

3. Electric-field-induced antiferroelectric to ferroelectric phase transition in polycrystalline NaNbO3

4. Polar metals by geometric design

5. Critical enhancement of thermopower in a chemically tuned polar semimetal MoTe 2

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1. Electrically Triggered Domain Wall Movement in Cu₂Se Semiconductor;ACS Applied Materials & Interfaces;2024-03-14

2. Strain-Induced Defect Evolution for the Construction of Porous Cu_2–xSe with Enhanced Thermoelectric Performance;ACS Applied Materials & Interfaces;2023-12-06

3. Intrinsic Atomic-Scale Antiferroelectric VOF₃ Nanowire with Ultrahigh-Energy Storage Properties;Nano Letters;2023-09-18

4. Single-layer Cu₂X (X = O, S, Se): auxetic materials modulated by strain engineering;Applied Physics Express;2023-08-01

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