In Situ Imaging of an Anisotropic Layer-by-Layer Phase Transition in Few-Layer MoTe<sub>2</sub>-Reference-Cited by-同舟云学术

In Situ Imaging of an Anisotropic Layer-by-Layer Phase Transition in Few-Layer MoTe₂

Published:2023-01-17 Issue:2 Volume:23 Page:677-684
ISSN:1530-6984
Container-title:Nano Letters
language:en
Short-container-title:Nano Lett.

Author:

Lee Chia-Hao¹^ORCID,Ryu Huije²,Nolan Gillian¹^ORCID,Zhang Yichao¹^ORCID,Lee Yangjin³^ORCID,Oh Siwon⁴,Cheong Hyeonsik⁴^ORCID,Watanabe Kenji⁵^ORCID,Taniguchi Takashi⁶^ORCID,Kim Kwanpyo³^ORCID,Lee Gwan-Hyoung²^ORCID,Huang Pinshane Y.¹⁷^ORCID

Affiliation:

1. Department of Materials Science and Engineering, University of Illinois Urbana−Champaign, Urbana, Illinois61801, United States

2. Department of Materials Science and Engineering, Seoul National University, Seoul08826, Korea

3. Department of Physics, Yonsei University, Seoul03722, Korea

4. Department of Physics, Sogang University, Seoul04107, Korea

5. Research Center for Functional Materials, National Institute for Materials Science, 1-1 Namiki, Tsukuba305-0044, Japan

6. International Center for Materials Nanoarchitectonics, National Institute for Materials Science, 1-1 Namiki, Tsukuba305-0044, Japan

7. Materials Research Laboratory, University of Illinois Urbana−Champaign, Urbana, Illinois61801, United States

Funder

Basic Energy Sciences

National Research Foundation of Korea

Japan Society for the Promotion of Science

Seoul National University

Publisher

American Chemical Society (ACS)

Subject

Mechanical Engineering,Condensed Matter Physics,General Materials Science,General Chemistry,Bioengineering

Link

https://pubs.acs.org/doi/pdf/10.1021/acs.nanolett.2c04550

Reference57 articles.

1. Coplanar semiconductor–metal circuitry defined on few-layer MoTe2 via polymorphic heteroepitaxy

2. MoTe2 Lateral Homojunction Field-Effect Transistors Fabricated using Flux-Controlled Phase Engineering

3. Two-dimensional MoS2-enabled flexible rectenna for Wi-Fi-band wireless energy harvesting

4. Electric-field induced structural transition in vertical MoTe2- and Mo1–xWxTe2-based resistive memories

5. Ionic modulation and ionic coupling effects in MoS2 devices for neuromorphic computing

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