Dimensionality-Inhibited Chemical Doping in Two-Dimensional Semiconductors: The Phosphorene and MoS2 from Charge-Correction Method-Reference-Cited by-同舟云学术

Dimensionality-Inhibited Chemical Doping in Two-Dimensional Semiconductors: The Phosphorene and MoS2 from Charge-Correction Method

Published:2021-07-23 Issue:15 Volume:21 Page:6711-6717
ISSN:1530-6984
Container-title:Nano Letters
language:en
Short-container-title:Nano Lett.

Author:

Zhu Guo-Jun¹²,Xu Yong-Gang¹²,Gong Xin-Gao¹²,Yang Ji-Hui¹²^ORCID,Yakobson Boris I.³^ORCID

Affiliation:

1. Department of Physics, Key Laboratory for Computational Science (MOE), State Key Laboratory of Surface Physics, Fudan University, Shanghai 200433, China

2. Shanghai Qizhi Institution, Shanghai 200232, China

3. Department of Materials Science and Nanoengineering, and Department of Chemistry, Rice University, Houston, Texas 77005, United States

Funder

Army Research Office

National Natural Science Foundation of China

US Office of Naval Research

Shanghai Sailing Program

Fudan Startup funding

Publisher

American Chemical Society (ACS)

Subject

Mechanical Engineering,Condensed Matter Physics,General Materials Science,General Chemistry,Bioengineering

Link

https://pubs.acs.org/doi/pdf/10.1021/acs.nanolett.1c02392

Reference55 articles.

1. Photonics and optoelectronics of 2D semiconductor transition metal dichalcogenides

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4. Electrically tunable excitonic light-emitting diodes based on monolayer WSe2 p–n junctions

5. Atomically thin p–n junctions with van der Waals heterointerfaces

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