Bias-Stress-Stable Solution-Processed Oxide Thin Film Transistors-Reference-Cited by-同舟云学术

Bias-Stress-Stable Solution-Processed Oxide Thin Film Transistors

Published:2010-02-26 Issue:3 Volume:2 Page:611-615
ISSN:1944-8244
Container-title:ACS Applied Materials & Interfaces
language:en
Short-container-title:ACS Appl. Mater. Interfaces

Author:

Jeong Youngmin¹,Bae Changdeuck¹,Kim Dongjo¹,Song Keunkyu¹,Woo Kyoohee¹,Shin Hyunjung¹,Cao Guozhong¹,Moon Jooho¹

Affiliation:

1. Department of Materials Science and Engineering, Yonsei University, 134 Shinchon-dong Seodaemun-gu, Seoul 120-749, Korea, School of Advanced Materials Engineering, Kookmin University, Jeongneung-gil 77, Seoul 136-702, Korea, and Department of Materials Science and Engineering, University of Washington, Seattle, Washington 98195

Publisher

American Chemical Society (ACS)

Subject

General Materials Science

Link

https://pubs.acs.org/doi/pdf/10.1021/am900787k

Reference24 articles.

1. Room-temperature fabrication of transparent flexible thin-film transistors using amorphous oxide semiconductors

2. Amorphous oxide channel TFTs

3. Recent advances in ZnO transparent thin film transistors

4. Flexible Electronics

5. Solution processed invisible all-oxide thin film transistors

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